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X-ray photoelectron spectroscopy investigation of boron carbide films deposited by sputtering

机译:溅射沉积碳化硼薄膜的X射线光电子能谱研究

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The interpretation of the surface chemical states of amorphous boron carbide films as revealed by X-ray photoelectron spectroscopy (XPS) is investigated in this work. Films were deposited by dc-magnetron sputtering and characterized by XPS employing sputter-cleaning and angle-resolved detection. Our results indicate that the intrinsic chemical states of boron carbide occur at similar to282.8 and similar to188.6. eV in the C-1s and B-1s lines, respectively, and that all other observed states are related to contamination due to exposure to ambient conditions. Structural modifications known to occur due to post-deposition annealing could not be observed by XPS, pointing to limitations of this technique. (C) 2004 Elsevier B.V. All rights reserved.
机译:在这项工作中研究了通过X射线光电子能谱(XPS)揭示的非晶碳化硼薄膜表面化学状态的解释。膜通过直流磁控溅射沉积,并通过采用溅射清洁和角度分辨检测的XPS进行表征。我们的结果表明碳化硼的内在化学态发生在类似于282.8和类似于188.6。 eV分别在C-1s和B-1s线中,并且所有其他观察到的状态与暴露于环境条件引起的污染有关。 XPS无法观察到由于沉积后退火而发生的已知结构变化,这表明该技术的局限性。 (C)2004 Elsevier B.V.保留所有权利。

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