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Adsorption of 7-ethynyl-2,4,9-trithia-tricyclo[3.3.1.1.(3,7)]decane on ultra-thin CdS films

机译:7-乙炔基-2,4,9-三硫杂三环[3.3.1.1。(3,7)]癸烷在超薄CdS薄膜上的吸附

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The adsorption mechanism for the new compound, 7-ethynyl-2,4,9-trithia-tricyclo[3.3.1.1(3,7)]decane (7ETTD), on ultra-thin films (similar to 3 nm) of CdS is investigated. Multiple reflection absorption IR spectroscopy, in conjunction with inelastic electron tunneling spectroscopy, indicates that this compound forms a self-assembled monolayer adsorbed on the CdS surface via each molecule's trithia-adamantane anchor. Conductance-voltage data are recorded for tunnel junctions of the type Al/CdS/7ETTD/Pb over a temperature range of 4 K to room temperature and they indicate that the presence of the 7ETTD layer on the CdS dramatically modifies the conductance-voltage behavior of the junctions. These measurements show that different conduction mechanisms, including tunneling and possibly hopping, are responsible for charge transfer through the junctions depending on current, temperature, and voltage. WKB fits to the data are used to determine barrier parameters (height and width) for Al/CdS/Pb junctions with and without adsorbed 7ETTD layers on the CdS. Analysis of the fits shows that tunneling occurs at low bias (less than similar to 0.2 V) but, at higher bias voltages, modification of the barrier parameters alone is insufficient to account for the observed conductance changes. A frontier orbital model is invoked which does offer a plausible explanation for these conductance changes. The model assumes bias-dependent coupling between HOMO and LUMO states of the adsorbed 7ETTD and the surface states on the CdS. The present work suggests that, because of the marked effect on the conductance of CdS ultra-thin films, 7ETTD and other similar compounds may be candidates for use in molecular electronic device fabrication. (c) 2006 Elsevier B.V. All rights reserved.
机译:新化合物7-乙炔基-2,4,9-三硫杂三环[3.3.1.1(3,7)]癸烷(7ETTD)在超薄CdS薄膜(约3 nm)上的吸附机理为调查。多次反射吸收红外光谱,结合非弹性电子隧穿光谱,表明该化合物形成了通过每个分子的三硫杂-金刚烷锚定吸附在CdS表面的自组装单层膜。在4 K到室温的温度范围内,记录了Al / CdS / 7ETTD / Pb型隧道结的电导电压数据,这些数据表明CdS上7ETTD层的存在极大地改变了电导率。交界处。这些测量结果表明,取决于电流,温度和电压的不同,包括隧穿和可能的跳跃在内的不同传导机制负责通过结的电荷转移。 WKB拟合数据用于确定在CdS上有和没有吸附7ETTD层的Al / CdS / Pb结的势垒参数(高度和宽度)。拟合分析表明,隧道效应发生在低偏置电压(小于0.2 V时),但是在较高偏置电压下,仅势垒参数的修改不足以解决观察到的电导率变化。调用了边界轨道模型,该模型确实为这些电导变化提供了合理的解释。该模型假设吸附的7ETTD的HOMO和LUMO状态与CdS上的表面状态之间存在依赖于偏压的耦合。本研究表明,由于对CdS超薄膜的导电性有显着影响,因此7ETTD和其他类似化合物可能是分子电子器件制造中的候选材料。 (c)2006 Elsevier B.V.保留所有权利。

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