Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN

摘要

The use of a nitrogen electron cyclotron resonance (ECR) plasma source has allowed the growth of GaAsN at GaAs substrate temperatures as high as 600 ℃, unlike the case for growth using radio frequency (RF) plasma sources, for which there is significant loss of nitrogen at substrate temperatures as low as 480-520 ℃. Photoluminescence (PL) intensities are significantly improved at a substrate temperature of 600 ℃ and are further improved slightly by using an ion trap to extract charged species from the beam. As the trap voltage is increased there is a reduction in the total nitrogen concentration, as measured by secondary ion mass spectrometry (SIMS), and a slight increase in the active nitrogen concentration, as measured by PL. These observations are consistent, for example, with charged and active nitrogen species together being involved in the formation of point defects, however more work is needed to clarify what may well prove to be a complex situation.