Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0001) surface

摘要

The Ba and Cs adsorption on the n-GaN(0001) surface has been studied m situ by the threshold photo-emission spectroscopy using s- and p-polarized light excitation. Two surface bands induced by Ba (Cs) adsorption are revealed in surface photoemission spectra below the Fermi level. The surface-Fermi level position is found to be changed from significantly below the conduction band minimum (CBM) at clean n-GaN surface to high above the CBM at Ba, Cs-GaN interfaces, with the transition from depletion to electron accumulation occurring at low coverages. Photoemission from the accumulation nanolayer is found to excite by visible light in the transparency region of GaN. Appearance of an oscillation structure in threshold photoemission spectra of the Ba, Cs-GaN interfaces with existing the accumulation layer is found to originate from Fabry-Perot interference in the transparency region of GaN.