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Effects of oxygen vacancy on adhesion of incoherent metal/oxide interface by first-principles calculations

机译:通过第一性原理计算氧空位对非相干金属/氧化物界面粘附的影响

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We investigate effects of oxygen vacancies on adhesion behavior of incoherent Ni/MgO(001) interface with large misfit, based on the density functional theory. We demonstrate that oxygen vacancies at any local atomic configuration of the incoherent geometry enhance the image-chargelike interaction between the ions in MgO and the ion-induced images in Ni, and stabilize adhesion of the Ni/ MgO(001) interface. The adhesion energy of the defective interface is remarkably larger than that of the perfect interface. We also show that force constants of the adhesive interactions near the oxygen vacancies are comparable to the Ni-Mg bond at the perfect interface. The vacancy-induced enhancement of the image electron accumulation hardly contributes to the interfacial stiffness, while it is reduced by losing the covalent Ni-O interaction due to an ontop oxygen vacancy.
机译:我们基于密度泛函理论,研究了氧空位对失配较大的Ni / MgO(001)界面的粘附行为的影响。我们证明,在非相干几何的任何局部原子构型处的氧空位都增强了MgO中的离子与Ni中的离子诱导图像之间的像电荷一样的相互作用,并稳定了Ni / MgO(001)界面的附着力。有缺陷的界面的粘附能明显大于完美界面的粘附能。我们还表明,氧空位附近的胶粘剂相互作用的力常数可与理想界面处的Ni-Mg键相媲美。由空位引起的图像电子积累的增强几乎不有助于界面刚度,而由于顶部氧空位而失去共价Ni-O相互作用而被降低。

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