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Diffusion-promoted-desorption mechanism for D_2 desorption from Si(100) surfaces

机译:D_2从Si(100)表面解吸的扩散促进解吸机理

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摘要

Temperature-programmed-desorption (TPD) spectra and isothermal desorption rates of D_2 molecules from a Si(100) surface have been calculated to reproduce experimental β_(1,A)-TPD spectra and isothermal desorption rate curves. In the diffusion-promoted-desorption (DPD) mechanism, hydrogen desorption from the Si(100) (2×1) surfaces takes place via D atom diffusion from doubly-occupied Si dimers (DODs) to their adjacent unoccupied Si dimers (UODs). Taking a clustering interaction among DODs into consideration, coverages θ_(DU) of desorption sites consisting of a pair of a DOD and UOD are evaluated by a Monte Carlo (MC) method. The TPD spectra for the β_(1,A) peak are obtained by numerically integrating the desorption rate equation R = v_A exp (-E_(d,A)/k_BT)θ_(DU), where v_A is the pre-exponential factor and E_(d,A) is the desorption barrier. The TPD spectra calculated for E_(d,A) = 1.6 eV and v_A = 2.7 × 10~9/s are found to be in good agreement with the experimental TPD data for a wide coverage range from 0.01 to 0.74 ML. Namely, the deviation from first-order kinetics observed in the coverage dependent TPD spectra as well as in the isothermal desorption rate curves can be reproduced by the model simulations. This success in reproducing both the experimental TPD data and the very low desorption barrier validates the proposed DPD mechanism.
机译:已计算出程序升温脱附(TPD)光谱和D_2分子从Si(100)表面的等温脱附速率,以重现实验β_(1,A)-TPD光谱和等温脱附速率曲线。在扩散促进解吸(DPD)机理中,氢从Si(100)(2×1)表面解吸是通过D原子从双重占据的Si二聚体(DOD)扩散到其相邻的未占据的Si二聚体(UOD)进行的。考虑到DOD之间的聚类相互作用,通过蒙特卡罗(MC)方法评估由一对DOD和UOD组成的解吸位点的覆盖角θ_(DU)。 β_(1,A)峰的TPD光谱是通过对解吸速率方程R = v_A exp(-E_(d,A)/ k_BT)θ_(DU)进行数值积分获得的,其中v_A是指数前因子, E_(d,A)是脱附势垒。发现E_(d,A)= 1.6 eV和v_A = 2.7×10〜9 / s的TPD光谱与实验TPD数据在0.01至0.74 ML的宽覆盖范围内均非常吻合。即,可以通过模型仿真来再现与覆盖率相关的TPD谱以及等温解吸速率曲线中观察到的与一级动力学的偏差。再现实验TPD数据和非常低的脱附势垒的成功验证了所提出的DPD机制。

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  • 来源
    《Surface Science》 |2011年第2期|p.32-39|共8页
  • 作者单位

    Department of Electrical Engineering, Yamagata University, Yonezawa 992-8510, Japan;

    rnDepartment of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan;

    rnDepartment of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan;

    rnDepartment of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    hydrogen; Si(100) surface; desorption; monte carlo method;

    机译:氢;Si(100)表面;解吸蒙特卡洛法;

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