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Influence of defects on the electronic structures of bilayer graphene

机译:缺陷对双层石墨烯电子结构的影响

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Based on first-principles total-energy calculation, we investigate the electronic structures of bilayer graphene, one of which layers possesses atomic or topological defects, to explore the possibility of band gap engineering of graphene by means of physisorpfion of defective graphene. Our calculations show that the pristine graphene layer possesses a finite energy gap between bonding and antibonding it states because of the potential undulation caused by the other graphene layers with defects. We also found that the gap values strongly depend on the defect species and their mutual arrangement with respect to the pristine layer. (C) 2015 Elsevier B.V. All rights reserved.
机译:基于第一性原理的总能计算,我们研究了双层石墨烯的电子结构,其中一层具有原子或拓扑缺陷,以探索通过缺陷石墨烯的物理吸附对石墨烯进行带隙工程的可能性。我们的计算表明,原始石墨烯层在键合状态和反键​​合状态之间具有有限的能隙,这是由于其他带有缺陷的石墨烯层引起的电势起伏。我们还发现,间隙值在很大程度上取决于缺陷种类及其相对于原始层的相互排列。 (C)2015 Elsevier B.V.保留所有权利。

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