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First-principles study of the structure properties of Al(111)/6H-SiC(0001) interfaces

机译:Al(111)/ 6H-SiC(0001)界面结构性质的第一性原理研究

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摘要

This paper presents a systematic study on the energetic and electronic structure of the Al(111)/6H-SiC(0001) interfaces by using first-principles calculation with density functional theory (DFT). There are all three situations for no-vacuum layer of Al/SiC superlattics, and two cases of C-terminated and Si-terminated interfaces are compared and analyzed. Through the density of states analysis, the initial information of interface combination is obtained. Then the supercells are stretched vertically along the z-axis, and the fracture of the interface is obtained, and it is pointed out that C-terminated SiC and Al interfaces have a better binding property. And, the fracture positions of C-terminated and Si-terminated interfaces are different in the process of stretching. Then, the distance variation in the process of stretching, the charge density differences, and the distribution of the electrons near the interface are analyzed. AI these work makes the specific reasons for the interface fracture are obtained at last. (C) 2017 Elsevier B.V. All rights reserved.
机译:本文利用密度泛函理论(DFT)的第一性原理计算系统研究了Al(111)/ 6H-SiC(0001)界面的能级和电子结构。 Al / SiC超晶格的无真空层存在三种情况,并比较和分析了C端和Si端两种界面。通过状态密度分析,获得界面组合的初始信息。然后将超级电池沿z轴垂直拉伸,获得界面断裂,并指出C端接的SiC和Al界面具有更好的结合性能。并且,在拉伸过程中,C末端和Si末端界面的断裂位置不同。然后,分析了拉伸过程中的距离变化,电荷密度差以及界面附近电子的分布。 AI这些工作使界面断裂的具体原因得以最终得到。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Surface Science》 |2018年第4期|1-7|共7页
  • 作者单位

    Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Henan, Peoples R China;

    Henan Univ Sci & Technol, Coll Mat Sci & Engn, Luoyang 471023, Peoples R China;

    Henan Univ Sci & Technol, Coll Mat Sci & Engn, Luoyang 471023, Peoples R China;

    Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471023, Peoples R China;

    Henan Univ Sci & Technol, Coll Mat Sci & Engn, Luoyang 471023, Peoples R China;

    Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Henan, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Interfaces; C-terminated; Si-terminated; Tensile; Charge density difference;

    机译:接口;C端接;Si端接;拉伸;电荷密度差;

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