Tunable electronic properties of silicene based heterojunctions with ultrathin high-La_2O_3 gate dielectric

摘要

The silicene/La_2O_3 heterojunctions envision promising applications in novel integrated functional nanodevices. The electronic properties of silicene, La_2O_3, and silicene/La_2O_3 heterojunctions are investigated by first-principles calculations. The silicene/La-terminated La_2O_3 heterojunction presents a 1.753 eV band gap, which is desired for silicene-based semiconductor devices. The effects of biaxial strain and external electric field are studied for the band structure of silicene/ La_2O_3 heterojunction. The band gap values of silicene/La_2O_3 heterojunction could be effectively modulated. These findings indicate the potential application prospects of silicene-based field effect transistor with La_2O_3 gate dielectric in nanoscale devices.