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Nanoscale heat conduction at a silicon-superfluid helium boundary

机译:硅超流体氦边界处的纳米级热传导

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The boundary between silicon crystal and superfluid helium-4 (1-2 K) is an interesting configuration for studying heat transfer mechanisms at very small length scales. This may prove useful in future heat conduction analysis in microstructures. We define two possible heat conduction regimes, namely a classical surface effect regime and a scattering effect regime. The distinction between these regimes depends upon the (l/λ) ratio, where the surface roughness length is l and the phonon wavelength is λ. In a preliminary experiment we show that heat conduction across a silicon-superfluid helium interface at ~2 K can be entirely explained by the scattering effect regime where diffuse phonon scattering from surface irregularities of nanometric scale lengths play a dominant role.
机译:硅晶体和超流体氦4(1-2 K)之间的边界是用于研究极小长度尺度上的传热机理的有趣结构。这可能在将来的微结构导热分析中很有用。我们定义了两种可能的导热方式,即经典的表面效应方式和散射效应方式。这些制度之间的区别取决于(l /λ)比,其中表面粗糙度长度为l,声子波长为λ。在初步实验中,我们表明,在〜2 K时跨硅-超流体氦界面的热传导可以完全由散射效应机制来解释,在该效应机制中,纳米尺度长度的表面不规则性引起的扩散声子散射起主要作用。

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