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Calculation of the dark current in a quantum well infrared photodetector

机译:量子阱红外光电探测器中暗电流的计算

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摘要

Dark currents in a biased quantum well fabricated using Al0.27Ga0.73As/GaAs heterojunctions are calculated at two different temperatures including thermionic field emission currents arising front the electron scattering with phonons and plasmons. In the electron-phonon scattering process several modes due to heterojunctions such as the confined, half-space and interface longitudinal optic phonons are taken into account. It is found that the confined phonon scattering process results in maximum currents compared to those obtained in the half-space and interface scattering modes. However. the magnitude of the currents that resulted from the electron-plasmon scattering process is found to be higher than that found from the electron scattering with confined phonons. Comparison of the calculated dark currents with experiments shows that the thermionic emission currents due to phonon and plasmon assisted processes are essential to get better agreement with experiments than the previously employed bulk phonon scattering process. (C) 2004 Elsevier Ltd. All rights reserved.
机译:在两个不同的温度下计算使用Al0.27Ga0.73As / GaAs异质结制造的偏置量子阱中的暗电流,包括在电子与声子和等离激元散射之前产生的热电子场发射电流。在电子-声子散射过程中,考虑了由异质结引起的几种模式,例如局限的,半空间和界面纵向光学声子。已发现,与在半空间和界面散射模式下获得的电流相比,受限声子散射过程会产生最大电流。然而。据发现,由电子-等离子体激元散射过程产生的电流强度要大于由受限声子进行电子散射所产生的电流强度。将计算出的暗电流与实验进行比较表明,与以前采用的体声子散射方法相比,声子和等离子体激元辅助过程产生的热电子发射电流对于与实验更好地取得一致性至关重要。 (C)2004 Elsevier Ltd.保留所有权利。

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