A ZnO nanowire-based humidity sensor

摘要

In this paper, we report the growth of high-density single crystalline ZnO nanowires on patterned ZnO:Ga/SiO_2/Si templates. A humidity sensor was then fabricated using the randomly oriented nanowires bridged across two electrodes. By measuring current-voltage characteristics of the fabricated device at 80℃, it was found that measured resistances were 5.9 × 10~5,4.3 × 10~5,3.7 × 10~5 and 3.2 × 10~5 Ω when measured with 25%, 50%, 70% and 90% relative humidity, respectively.