The silicon nanowires(SiNWs) and ZnO were prepared by using wet chemical etching and chemical bath deposition method(CBD) respectively. ZnO/SiNWs heterojunction was fabricated as capacitive humidity sensor. The morphology and structure of the ZnO/SiNWs nanocomposites were characterized by Scanning Electron Microsopy (SEM) and X-ray diffraction. Sensing experiments were examined by measuring the capacitance response of ZnO/SiNWs sensor which was put into different humidity environments. The results demonstrats that the humidity sensor exhibits high sensitivity and fast response time. Therefore, ZnO/SiNWs sensors are potential materials for high perfor-mance humidity sensor.% 采用湿法化学刻蚀方法制备硅纳米线(SiNWs),对其进行快速热退火处理,利用水浴法在SiNWs表面生长氧化锌(ZnO)纳米线,制备了ZnO/SiNWs异质结湿度传感器。采用扫描电子显微镜(SEM)和X射线衍射仪(XRD)分析了ZnO/SiNWs异质结的表面形貌和结构。测试了ZnO/SiNWs异质结湿度传感器不同湿度环境的电容响应,分析了它的工作机制。测试结果表明:传感器具有相对较大的灵敏度,较短的响应时间,较好的重复性、湿滞特性和稳定性,从而说明ZnO/SiNWs异质结在湿敏领域有很好的应用前景。
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