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Growth and characterization of Cd_(1-x)Zn_xTe/ZnO heterostructures from furnace-annealed CdTe/Zn multi-stacks

机译:炉退火CdTe / Zn多电池堆中Cd_(1-x)Zn_xTe / ZnO异质结构的生长和表征

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摘要

Cd_(1-x)Zn_xTe/ZnO hetero-structures were grown on glass substrates by furnace annealing of stack-deposited CdTe/Zn/CdTe/Zn thin film multi-layers in air. The multilayered structures were annealed in furnace at various temperatures in between 350 and 600 ℃ XRD results revealed that while growth of Cd_(1-x)Zn_xTe compound reached saturation by 500 ℃, ZnO growth geared up in between 550 and 600 ℃ The band-gap values of the composite structures were less than either standard Cd_(1-x)Zn_xTe or ZnO. It was because of large presence of free Zn and Cd and staggered type-Ⅱ band alignment. An exponential growth was observed for the Cd_(1-x)Zn_xTe particle sizes against annealing temperature. Next SEM images showed reduced surface granularity with increasing Zn percentage in Cd_(1-x)Zn_xTe. SEM micrographs further revealed growth of fiber like formations of ZnO on film surface with increasing annealing temperature. ImageJ software was further used to analyse the SEM micrographs and compositional characteristics from EDX results were co-related with structural, optical and morphological results.
机译:通过在空气中堆叠沉积的CdTe / Zn / CdTe / Zn薄膜多层的炉子退火,在玻璃基板上生长Cd_(1-x)Zn_xTe / ZnO异质结构。 XRD结果表明,当Cd_(1-x)Zn_xTe化合物的生长在500℃达到饱和时,ZnO的生长在550到600℃之间加速。复合结构的间隙值小于标准Cd_(1-x)Zn_xTe或ZnO。这是由于大量存在游离锌和镉以及交错的Ⅱ型能带排列。观察到Cd_(1-x)Zn_xTe粒径相对于退火温度呈指数增长。接下来的SEM图像显示,随着Cd_(1-x)Zn_xTe中Zn含量的增加,表面粒度降低。 SEM显微照片进一步揭示了随着退火温度的升高,薄膜表面上的ZnO纤维状形成物的生长。进一步使用ImageJ软件分析SEM显微照片,EDX结果的组成特征与结构,光学和形态学结果相关。

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