首页> 外国专利> HETEROSTRUCTURE OF LUMINESCENCE ZNO NANO-WIRE COMPRISING ZNS QUANTUM DOT AND METHOD FOR FABRICATING THE SAME

HETEROSTRUCTURE OF LUMINESCENCE ZNO NANO-WIRE COMPRISING ZNS QUANTUM DOT AND METHOD FOR FABRICATING THE SAME

机译:包含zns量子点的发光zno纳米线的异质结构及其制造方法

摘要

A heterostructure of light-emitting nano-wires is provided to realize a light-emitting effect in a broader range of visible light wavelengths than the range of light emitted from pure zinc oxide nano-wires. A heterostructure(10) of light-emitting nano-wires comprises zinc sulfide(ZnS) quantum dots(110) randomly distributed on the surface of zinc oxide(ZnO) nano-wires(100), and emits light in an intermediate wavelength range between the main wavelength range of the light emitted uniquely by zinc oxide and the impurity level wavelength range of the light emitted by zinc sulfide. The intermediate wavelength range is 410-420 nm.
机译:提供发光纳米线的异质结构以实现比从纯氧化锌纳米线发射的光的范围更宽的可见光波长范围内的发光效果。发光纳米线的异质结构(10)包括随机分布在氧化锌(ZnO)纳米线(100)表面上的硫化锌(ZnS)量子点(110),并发出介于氧化锌唯一发出的光的主要波长范围和硫化锌发出的光的杂质能级波长范围。中间波长范围是410-420 nm。

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