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机译:通过表面光电压光谱法鉴定AlGaN / GaN异质结构中深陷阱态的空间位置
Semiconductor Materials Lab., Materials Science Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013, M. P., India,Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India;
Semiconductor Materials Lab., Materials Science Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013, M. P., India;
Semiconductor Materials Lab., Materials Science Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013, M. P., India,Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India;
AlGaN/GaN; HEMT; Defects; SPS; PL; MBE;
机译:电流模式深电平瞬态光谱研究AlGaN / GaN异质结构场效应晶体管中的深陷阱:器件位置的影响
机译:电流模式深能级瞬态光谱研究AlGaN / GaN异质结构场效应晶体管中的深陷阱:器件位置的影响
机译:深能级瞬态光谱研究AlGaN / GaN / SiC异质结构中的陷阱
机译:InGaN / GaN / AlGaN多量子孔发光二极管表面光伏光谱
机译:跨剖面AlGaN / GaN设备中陷阱的扫描探针光谱
机译:角分辨X射线光电子能谱研究Al2O3封端的GaN / AlGaN / GaN异质结构的表面极化
机译:深能级瞬态光谱研究AlGaN / GaN异质结构中的深陷阱:GaN缓冲层中碳浓度的影响