首页> 外文期刊>Solid-State Electronics >An ultra-low power CMOS random number generator
【24h】

An ultra-low power CMOS random number generator

机译:超低功耗CMOS随机数发生器

获取原文
获取原文并翻译 | 示例
       

摘要

This paper proposes an ultra-low power CMOS random number generator (RNG), which is based on an oscillator-sampling architecture. The noisy oscillator consists of a dual-drain MOS transistor, a noise generator and a voltage control oscillator. The dual-drain MOS transistor can bring extra-noise to the drain current or the output voltage so that the jitter of the oscillator is much larger than the normal oscillator. The frequency division ratio of the high-frequency sampling oscillator and the noisy oscillator is small. The RNG has been fabricated in a 0.35 μm CMOS process. It can produce good quality bit streams without any post-processing. The bit rate of this RNG could be as high as 100 kbps. It has a typical ultra-low power dissipation of 0.91 μW. This novel circuit is a promising unit for low power system and communication applications.
机译:本文提出了一种基于振荡器采样架构的超低功耗CMOS随机数发生器(RNG)。噪声振荡器由双漏极MOS晶体管,噪声发生器和电压控制振荡器组成。双漏极MOS晶体管会给漏极电流或输出电压带来额外的噪声,因此振荡器的抖动比普通振荡器大得多。高频采样振荡器和噪声振荡器的分频比小。 RNG已通过0.35μmCMOS工艺制造。它可以产生高质量的比特流,而无需任何后处理。此RNG的比特率可能高达100 kbps。它具有0.91μW的典型超低功耗。这种新颖的电路是用于低功率系统和通信应用的有希望的单元。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号