A micromachined low-power temperature-regulated bandgap voltage reference

摘要

A low-power, temperature-regulated bandgap voltage reference is demonstrated in a commercial CMOS process. Low-power operation is achieved by thermally isolating a small portion of the die using a single postprocess micromachining step requiring no extra masks or modifications to the CMOS process. The reference has a 53000/spl deg/ C/W thermal resistance, a 2.5 ms thermal time constant, and uses 1.5 mW at 25/spl deg/C. Temperature regulation improves the temperature coefficient from 100 ppm//spl deg/C to 9 ppm//spl deg/C over 0-80/spl deg/C.