A physical alpha-power law MOSFET model

摘要

A new compact physics-based alpha-power law MOSFET model isnintroduced to enable projections of low power circuit performance fornfuture generations of technology by linking the simple mathematicalnexpressions of the original alpha-power law model with their physicalnorigins. The new model, verified by HSPICE simulations and measuredndata, includes: 1) a subthreshold region of operation for evaluating thenon/off current tradeoff that becomes a dominant low power design issuenas technology scales, 2) the effects of vertical and lateral high fieldnmobility degradation and velocity saturation, and 3) threshold voltagenroll-off. Model projections for MOSFET CV/I indicate a 2X-performancenopportunity compared to the National Technology Roadmap fornSemiconductors (NTRS) extrapolations for the 250, 180, and 150 nmngenerations subject to maximum leakage current estimates of the roadmap.nNTRS and model calculations converge at the 70 nm technology generation,nwhich exhibits pronounced on/off current interdependence for low powerngigascale integration