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首页> 外文期刊>IEEE Journal of Solid-State Circuits >The on-chip 3-MB subarray-based third-level cache on an Itanium microprocessor
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The on-chip 3-MB subarray-based third-level cache on an Itanium microprocessor

机译:安腾微处理器上基于片上3 MB子阵列的第三级缓存

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The 3-MB on-chip level three cache in the Itanium 2 processor, built on an 0.18-Μm, six-layer Al metal process, employs a subarray design style that efficiently utilizes available area and flexibly adapts to floor plan changes. Through a distributed decoding scheme and compact circuit design and layout, 85% array efficiency was achieved for the subarrays. In addition, various test and reliability features were included. The cache allows for a store and a load every four core cycles and has been characterized to operate above 1.2 GHz at 1.5 V and 110°C. When running at 1.0 GHz, the cache provides a total bandwidth of 64 GB/s.
机译:Itanium 2处理器中的3 MB片上三级高速缓存建立在0.18-μm的六层铝金属工艺之上,采用了子阵列设计风格,可有效利用可用面积并灵活地适应平面布置图的变化。通过分布式解码方案和紧凑的电路设计和布局,子阵列的阵列效率达到了85%。此外,还包括各种测试和可靠性功能。该高速缓存允许每四个内核周期进行一次存储和加载,其特征是可在1.5 V和110°C下在1.2 GHz以上的频率下运行。当以1.0 GHz运行时,缓存提供的总带宽为64 GB / s。

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