A comparison of linear handset power amplifiers in different bipolar technologies

摘要

This work evaluates four linear power amplifiers for wireless handset applications that were fabricated (or simulated) in four different bipolar technologies. The four bipolar technologies are currently competing to become, or remain as, the preferred bipolar technology for the commercial development of power amplifier modules. The four technologies are GaAs HBT, Si BJT, SiGe HBT, and InP HBT. The purpose of this work is to evaluate the performance of power amplifiers in each of these competing technologies in terms of typical linear handset PA requirements (i.e., POUT, ACPR, PAE, PGAIN, and ruggedness).