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Bias circuit design for bipolar power amplifier linearity improvement

机译:偏置电路设计,可改善双极型功率放大器的线性度

摘要

A bias circuit (2) for a power amplifier (1) comprises a first bipolar transistor (9) arranged to form a current mirror with a bipolar power transistor (8) of the power amplifier (1). The base of the first bipolar transistor (9) is coupled to a first resistor (11), which is in series with a second resistor (10), the second resistor (10) representing an output terminal of the bias circuit (2) for coupling to the base of the bipolar power transistor (8). A second bipolar transistor (12) is coupled via its emitter to the junction of the first (11) and second (10) resistors and is adapted to control the impedance at the junction of the first (11) and second (10) resistors such that the impedance of the bias circuit (2) at the output terminal is substantially dependent on the value of the second resistor (10) alone.
机译:用于功率放大器(1)的偏置电路(2)包括第一双极晶体管(9),第一双极晶体管(9)被布置为与功率放大器(1)的双极功率晶体管(8)形成电流镜。第一双极晶体管(9)的基极耦合到第一电阻(11),该电阻与第二电阻(10)串联,第二电阻(10)代表偏置电路(2)的输出端,用于耦合到双极型功率晶体管(8)的基极。第二双极晶体管(12)通过其发射极耦合到第一电阻器(11)和第二电阻器(10)的结点,并适于控制第一电阻器(11)和第二电阻器(10)的结点处的阻抗,例如偏置电路(2)在输出端的阻抗基本上取决于第二电阻器(10)的值。

著录项

  • 公开/公告号EP2375565A1

    专利类型

  • 公开/公告日2011-10-12

    原文格式PDF

  • 申请/专利权人 NXP B.V.;

    申请/专利号EP20100159536

  • 发明设计人 ZAHARIEV IVAN;BRATATJANDRA MARCEL;

    申请日2010-04-09

  • 分类号H03F1/30;H03F1/32;G05F3/26;

  • 国家 EP

  • 入库时间 2022-08-21 17:53:29

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