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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas
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A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas

机译:具有硅片上天线的77 GHz相控阵收发器:接收器和天线

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In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency synthesizer, phase rotators, combining amplifiers, and on-chip dipole antennas. The signal combining is performed using a novel distributed active combining amplifier at an IF of 26 GHz. In the LO path, the output of the 52-GHz VCO is routed to different elements and can be phase shifted locally by the phase rotators. A silicon lens on the backside is used to reduce the loss due to the surface-wave power of the silicon substrate. Our measurements show a single-element LNA gain of 23 dB and a noise figure of 6.0dB. Each of the four receive paths has a gain of 37 dB and a noise figure of 8.0 dB. Each on-chip antenna has a gain of +2 dBi
机译:在本文中,我们介绍了一个完全集成的77 GHz四元件相控阵收发器的接收器和片上天线部分,该芯片具有硅芯片。芯片的接收器部分包括完整的下变频路径,包括低噪声放大器(LNA),频率合成器,相位旋转器,组合放大器和片上偶极子天线。使用新颖的分布式有源组合放大器以26 GHz的IF进行信号组合。在本振路径中,52 GHz VCO的输出被路由到不同的元件,并且可以通过相位旋转器进行局部相移。背面的硅透镜用于减少由于硅基板的表面波功率引起的损耗。我们的测量结果显示单元素LNA增益为23 dB,噪声系数为6.0dB。四个接收路径中的每一个都有37 dB的增益和8.0 dB的噪声系数。每个片上天线的增益为+2 dBi

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