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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Low-Spurious Low-Power 12-bit 160-MS/s DAC in 90-nm CMOS for Baseband Wireless Transmitter
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A Low-Spurious Low-Power 12-bit 160-MS/s DAC in 90-nm CMOS for Baseband Wireless Transmitter

机译:用于基带无线发送器的90nm CMOS低杂散低功耗12位160-MS / s DAC

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摘要

A low-spurious low-power 12-bit 160-MS/s digital to analog converter (DAC) for baseband wireless transmitter is proposed and demonstrated. Degenerated current switches are introduced and benefits of using them are discussed. Mismatch behavior under packaging-induced die stress is also presented. The mobility shift caused by package stress inherited from a thin-die is a dominant source of I/Q mismatch. A 2-channel I/Q DAC core consumes 4 mA with a 1.3/2.6 V dual supply. The 0.13 ${hbox {mm}}^{2}$ I/Q DAC core fabricated in 90-nm digital CMOS process with a highly-integrated digital processor achieves 74 dB SFDR, 55 dB SNDR, and $-$73 dB THD for a 975 kHz sinusoid at 153.6 MS/s sample rate.
机译:提出并演示了一种用于基带无线发射机的低杂散低功耗12位160-MS / s数模转换器(DAC)。介绍了退化电流开关,并讨论了使用它们的好处。还介绍了在包装引起的芯片应力下的不匹配行为。由薄晶粒继承的封装应力导致的迁移率变化是I / Q不匹配的主要来源。 2通道I / Q DAC内核通过1.3 / 2.6 V双电源消耗4 mA电流。采用高度集成的数字处理器,采用90nm数字CMOS工艺制造的0.13 $ {hbox {mm}} ^ {2} $ I / Q DAC内核,可实现74 dB SFDR,55 dB SNDR和$-$ 73 dB的THD。 975 kHz正弦波,采样率为153.6 MS / s。

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