TG-SPP: A One-Transmission-Gate Short-Path Padding for Wide-Voltage-Range Resilient Circuits in 28-nm CMOS

摘要

Resilient circuits with timing error detection and correction (EDAC) can eliminate the excess timing margin but suffer from the short-path (SP) issue where SPs must be padded to exceed the detection window. SP padding (SPP) is similar to, but severer than, hold time fixing. Thus, it incurs significant area overhead, especially when working in the near-threshold region. In this article, we propose a transmission gate-based SPP (TG-SPP) method, which uses only one transmission gate to extend an SP to the negative clock phase while keeping the critical paths unaffected. Compared with the two-phase latch way or the conventional padding with tens to hundreds of buffers in an SP, our method efficiently decreases the overhead. We develop transmission gate insertion rules and an automatic insertion flow to overcome the complicated intersection problem of short and critical paths. To further reduce the EDAC area overhead, we also propose a lightweight error detection latch that has only two extra transistors compared to a conventional 24-T flip-flop for the conventional way. We implement all the proposed techniques in an SHA-256 chip using the 28-nm CMOS process. Results show that our TG-SPP method achieves the same padding effect as the two-phase latch-based method while reducing both the glitch power and sequential area overhead by a factor of 6 . The fabricated resilient chips are measured to achieve 55%-405% frequency improvement and 38.6%-69.4% power saving compared with the typical margined baseline at the near-threshold region.