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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A CMOS 5.37-mW 10-Bit 200-MS/s Dual-Path Pipelined ADC
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A CMOS 5.37-mW 10-Bit 200-MS/s Dual-Path Pipelined ADC

机译:CMOS 5.37mW 10位200MS / s双通道流水线ADC

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摘要

A 10-bit 200-MS/s pipelined ADC was fabricated using a standard 65 nm CMOS technology. We propose a dual-path amplification technique for residue generation. We split the pipeline stage into a coarse-stage multiplying digital-to-analog converter (MDAC) and a fine-stage MDAC. The opamps for these two MDACs require different specifications. They can be designed and optimized separately. They are turned off when not in use to save power. We modify the operation of a pipeline stage to accommodate the dual-path scheme by using time-interleaving capacitor sets. Operating at 200 MS/s sampling rate, this ADC consumes 5.37 mW from a 1 V supply. It achieves a signal-to-noise-plus-distortion ratio (SNDR) better than 55 dB SNDR over the entire Nyquist band. The chip active area is 0.19 mm$^{2}$ .
机译:使用标准65 nm CMOS技术制造了10位200-MS / s流水线ADC。我们提出了残留物产生的双路径扩增技术。我们将流水线级分为粗级乘法数模转换器(MDAC)和细级MDAC。这两个MDAC的运算放大器需要不同的规格。它们可以分别设计和优化。不使用时将其关闭以节省电量。我们通过使用时间交错电容器组来修改流水线级的操作以适应双路径方案。该ADC以200 MS / s的采样速率工作,从1 V电源消耗的电流为5.37 mW。在整个奈奎斯特频带上,它的信噪比失真比(SNDR)优于55 dB SNDR。芯片有效面积为0.19毫米<公式公式类型=“ inline”> $ ^ {2} $

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