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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A 24.7 mW 65 nm CMOS SAR-Assisted CT ΔΣ Modulator With Second-Order Noise Coupling Achieving 45 MHz Bandwidth and 75.3 dB SNDR
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A 24.7 mW 65 nm CMOS SAR-Assisted CT ΔΣ Modulator With Second-Order Noise Coupling Achieving 45 MHz Bandwidth and 75.3 dB SNDR

机译:具有二阶噪声耦合的24.7 mW 65 nm CMOS SAR辅助CTΔΣ调制器可实现45 MHz带宽和75.3 dB SNDR

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摘要

A continuous-time (CT) sixth-order ΔΣ modulator, employing a 4 bit asynchronous successive-approximation-register (ASAR) quantizer, incorporates second-order noise coupling (NC) and excess-loop-delay compensation, all are tightly integrated into the switched-capacitor (SC) SAR digital-to-analog converter (DAC). The mixed-mode second-order NC structure is implemented in both discrete-time (DT) and CT domains. Clocked at 900 MHz, the 65 nm CMOS prototype measures a 120 dB/decade shaped noise slope and a peak 75.3 dB SNDR at an over-sampling ratio (OSR) of 10, yielding a Schreier FoM of 167.9 dB and a Walden FoM of 57.7 fJ/conversion-step. The modulator occupies an active area of 0.16 mm2 and consumes 24.7 mW.
机译:连续时间(CT)六阶ΔΣ调制器,采用4位异步逐次逼近寄存器(ASAR)量化器,结合了二阶噪声耦合(NC)和超额环路延迟补偿,所有这些都紧密集成在一起开关电容器(SC)SAR数模转换器(DAC)。混合模式二阶NC结构在离散时间(DT)和CT域中均实现。 65 nm CMOS原型的时钟频率为900 MHz,在过采样比(OSR)为10时,可测量120 dB /十进制形状的噪声斜率和75.3 dB的峰值SNDR,其Schreier FoM为167.9 dB,Walden FoM为57.7。 fJ /转换步骤。调制器的有效面积为0.16 mm2,功耗为24.7 mW。

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