A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS

摘要

The first metal-fuse technology in 22 nm tri-gate high-k metal-gate CMOS technology is presented. The memory technology offerings in high-volume manufacturing include a 2.2 V programmable high-density and a 1.6 V programmable low-voltage (LV) 1T1R bit cell. The LV operability of the technology allows the fuse arrays to be coupled with power delivery circuits operating at standard logic voltage levels. A charge pump voltage doubler operating on a 1 V voltage rail is demonstrated in this paper with healthy fusing yield.