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首页> 外文期刊>IEEE Journal of Solid-State Circuits >AC-and DC-powered subnanosecond 1-kbit Josephson cache memory design
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AC-and DC-powered subnanosecond 1-kbit Josephson cache memory design

机译:交流和直流供电的亚纳秒1 kb Josephson高速缓存存储器设计

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摘要

The address decoders, address line drivers, and sense circuits of the fully decoded memory consist of resistor-coupled Josephson logic circuits to realize fast access. The memory cell is constructed from two three-junction symmetric SQUID (superconducting quantum interface device) gates, and a four-flux-quanta storage loop for enabling bipolar current drive. This memory configuration has intrinsic advantages in regard to magnetic flux trapping in address lines and a gate circuit latch-up problem over a DC-powered memory constructed from inductor coupled gates. Individual control and cell circuits were fabricated, using a lead-alloy process, and their operation was verified. A 570-ps read access time is estimated as the sum measured 280-ps decoding time, and calculated 130-ps address line current rising time, 110-ps sense time, and 50-ps signal propagation time. The 1-kb chip is designed to consume 9 mW without voltage regulators.
机译:完全解码后的存储器的地址解码器,地址线驱动器和感测电路由电阻耦合的约瑟夫森逻辑电路组成,可实现快速访问。该存储单元由两个三结对称SQUID(超导量子接口设备)门和一个用于双极性电流驱动的四磁通量存储环路构成。与由电感器耦合的栅极构成的直流供电存储器相比,这种存储器配置在地址线中的磁通量捕获和栅极电路闩锁问题方面具有固有优势。使用铅合金工艺制造了单独的控制和单元电路,并验证了它们的操作。估计570 ps的读取访问时间是测得的280 ps解码时间与计算出的130 ps地址线电流上升时间,110 ps感测时间和50 ps信号传播时间之和。 1kb芯片设计为在没有稳压器的情况下消耗9mW的功率。

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