A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers

摘要

A digitized replica bitline delay technique has been proposed for random-variation-tolerant timing generation of static random access memory (SRAM) sense amplifiers (SA). The timing variation of SA attributable to the random variation of transistor threshold voltage $({rm V}_{rm TH})$ is reduced by a sufficient count of replica cells, and replica bitline delay is digitized and multiplied to adjust it to the target timing for SA. The variation of the generated timing was 41% smaller than that with a conventional technique and cycle time was reduced 20% at the supply voltage $({rm V}_{rm DD})$ of 0.6 V in 40 nm CMOS technology with this scheme.