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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >53 Gbps Native Composite-Field AES-Encrypt/Decrypt Accelerator for Content-Protection in 45 nm High-Performance Microprocessors
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53 Gbps Native Composite-Field AES-Encrypt/Decrypt Accelerator for Content-Protection in 45 nm High-Performance Microprocessors

机译:用于45 nm高性能微处理器的内容保护的53 Gbps本机复合场AES加密/解密加速器

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摘要

This paper describes an on-die, reconfigurable AES encrypt/decrypt hardware accelerator fabricated in 45 nm CMOS, targeted for content-protection in high-performance microprocessors. 100% round computation in native ${rm GF}(2 ^{4} ) ^{2}$ composite-field arithmetic, unified reconfigurable datapath for encrypt/decrypt, optimized ground & composite-field polynomials, integrated affine/bypass multiplexer circuits, fused Mix/InvMixColumn circuits and a folded ShiftRow datapath enable peak 2.2 Tbps/Watt AES-128 energy efficiency with a dense 2-round layout occupying 0.052 ${hbox {mm}}^{2}$ , while achieving: (i) 53/44/38 Gbps AES-128/192/256 performance, 125 mW, measured at 1.1 V, 50$,^{circ}{hbox{C}}$ , (ii) scalable AES-128 performance up to 66 Gbps, measured at 1.35 V, 50$,^{circ}{hbox{C}}$ , (iii) wide operating supply voltage range with robust subthreshold voltage performance of 800 Mbps, 409 $mu{hbox {W}}$, measured at 320 mV, 50 $,^{circ}{hbox{C}}$ (iv) 37% Sbox delay reduction and 25% area reduction with a compact Sbox layout occupying 759 $mu{hbox {m}} ^{2}$ (v) 67% reduction in worst-case interconnect length and 33% reduction in ShiftRow wiring tracks and (vi) 43% reduction in Mix/InvMixColumn area with no performance penalty.
机译:本文介绍了一种在45 nm CMOS上制造的可模制,可重新配置的AES加密/解密硬件加速器,旨在实现高性能微处理器中的内容保护。在本机$ {rm GF}(2 ^ {4})^ {2} $中进行100%运算,复合场算法,用于加密/解密的统一可重新配置数据路径,优化的地面和复合场多项式,集成仿射/旁路多路复用器电路,混合的Mix / InvMixColumn电路和折叠的ShiftRow数据路径可实现2.2 Tbps / Watt的峰值AES-128能量效率,密集的2轮布局占据0.052 $ {hbox {mm}} ^ {2} $,同时实现:(i) 53/44/38 Gbps AES-128 / 192/256性能,125 mW,在1.1 V下测量,50 $,50 $,(ii)高达66 Gbps的可扩展AES-128性能,在1.35 V,50 $,^ {circ} {hbox {C}} $上测量,(iii)宽工作电源电压范围,具有800 Mbps的稳健亚阈值电压性能,测量值为409 $ mu {hbox {W}} $在320 mV时,50 $,^ {circ} {hbox {C}} $(iv)紧凑的Sbox布局占用759 $ mu {hbox {m}} ^ {2},Sbox延迟减少了37%,面积减少了25% $(v)最坏情况下的互连长度减少了67%,ShiftRow接线迹减少了33%,并且(v i)Mix / InvMixColumn区域减少43%,而不会降低性能。

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