Sub-micrometer thick CuInSe_2 films for solar cells using sequential elemental evaporation

摘要

CuInSe_2 thin films were prepared using sequential vacuum evaporation of In, Se and Cu at moderately low substrate temperatures, avoiding any treatment using toxic H_2Se gas. The samples were annealed at 400 ℃ at a pressure of 10~(-5) mbar to form CuInSe_2. Structural, optical, electrical, compositional and morphological characterizations were carried out on these films. We could obtain highly stoi-chiometric film, using this simple method, without opting for co-evaporation or high substrate temperature for deposition.