Characterization of recombination properties at diffused surfaces for industrial silicon solar cell concepts

摘要

This paper describes an experiment to evaluate the surface recombination properties of phosphorous diffused surfaces for crystalline silicon solar cells. In this experiment the analysis of surface recombination properties for the phosphoryl chloride (POCl3) diffusion is carried out. Investigation of recombination properties on diffused surfaces is crucial for the conversion efficiency of silicon solar cells. Hence, the dark saturation current densities (J(o)) are determined via quasi steady state photoconductance (QSSPC) decay measurement and the doping profiles by electrochemical-capacitance voltage (ECV) measurement. All the diffusion processes are performed in a quartz tube furnace. The samples are diffused at peak temperatures of 800-950 degrees C. Therefore; the influence of several parameters for example the extent of surface concentration, the diffusion temperature and the dark saturation current density (J(o)) are evaluated. (C) 2016 Elsevier Ltd. All rights reserved.