The characterisation of crystalline silicon photovoltaic devices using the manufacturer supplied data

摘要

Currently, the single diode, five parameter model is extensively used to mathematically model the electrical behaviour of a photovoltaic device. The accuracy of this model is, however, strongly dependent on a number factors but particularly the quality of the five parameters used to characterise the devices unique performance behaviour. These are; the series and shunt resistances, the photogenerated and reverse saturation currents, and the diode factor. In this study, a new method is presented to determine four of the five parameter values using the data typically provided by the manufacturer. The proposed method is based on calculating the values for the series and shunt resistances and the photogenerated and reverse saturation currents by solving the underlying non-linear equations at shortcircuit, maximum-power-point, and open-circuit conditions numerically.