Flexible p-type PEDOT:PSS/a-Si:H hybrid thin film solar cells with boron- doped interlayer

摘要

We reported highly flexible a-Si:H thin film solar cells with p-type poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) window. We firstly adopted the substrate-type cell structure on 75 mu m-thick polyimide (PI) film unlike earlier studies in which the superstrate-type cell structures were utilized and the deformation of PEDOT:PSS was inevitably caused by subsequent deposition processes. We clearly demonstrated that the performance of the hybrid a-Si:H thin film solar cells with the substrate-type structure was superior to that of the superstrate-type cells. A highly boron-doped interlayer (IL) of 5 nm thickness was introduced at the heterointerface between the p-type PEDOT:PSS and intrinsic a-Si:H to enhance built-in potential and form a homogeneous p/i-junction in the cell, which led to further improvement in the cell performance. The efficiencies of the cells with the PEDOT:PSS/IL window on glass and PI substrates were 7.40% and 6.52%, respectively, which were considerably higher than that of the cell with a conventional p-type microcrystalline (mu c-) Si:H window. Also, the degradation of the cell with PEDOT:PSS window by bending was much smaller than the cell with p-type mu c-Si:H window, particularly at bending radius 10 mm. The present work demonstrates that PEDOT:PSS with a proper interfacial layer is a promising p-type window for substrate-type a-Si:H thin film solar cells and also for enhancing the flexibility of inorganic light absorbing materials-based solar cells on flexible film substrates.