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A Current-Mode Dual-Slope CMOS Temperature Sensor

机译:电流模式双斜率CMOS温度传感器

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A current-mode dual-slope CMOS temperature sensor is presented in this paper. It employs a proportional-to-absolute-temperature (PTAT) current generator, which operates in the sub-threshold region, and a novel temperature-insensitive CMOS inverter, replacing a traditional voltage comparator for power saving, to create PTAT pulsewidth. A binary counter is then utilized to quantize the pulse to a digital output value. It achieves a temperature inaccuracy of −3.39 °C–2 °C over the common industrial temperature range from −40 °C to 85 °C for five measured chip samples by utilizing the second-order curvature correction, and an average temperature resolution of 0.259 °C/LSB. The conversion rate of the digital output data is 3.5 kSa/s. The 2 V supply voltage is utilized and the total power dissipation is 14.286 , leading to 4.082-nJ/Sa energy efficiency and 0.274-nJ resolution figure of merit (FoM). It was fabricated by the TSMC 0.35- CMOS process, and the core area occupies 0.0345 mm. The utilized dual-slope architecture has the advantages of compactness, power-saving, and high design flexibility.
机译:本文提出了一种电流模式双斜率CMOS温度传感器。它采用了在亚阈值范围内工作的比例绝对温度(PTAT)电流发生器,以及新型的对温度不敏感的CMOS反相器,以取代传统的电压比较器以节省功耗,从而产生了PTAT脉冲宽度。然后利用二进制计数器将脉冲量化为数字输出值。通过使用二阶曲率校正,它在五个被测芯片样品的−40°C至85°C的通用工业温度范围内实现了−3.39°C–2°C的温度误差,其平均温度分辨率为0.259 °C / LSB。数字输出数据的转换速率为3.5 kSa / s。利用2 V电源电压,总功耗为14.286,可实现4.082nJ / Sa的能效和0.274nJ的分辨率品质因数(FoM)。它是由台积电0.35-CMOS工艺制造的,核心面积为0.0345毫米。利用的双斜率架构具有紧凑,省电,设计灵活性高的优点。

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