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Resonance shifts in SPR curves of nonabsorbing, weakly absorbing, and strongly absorbing dielectrics

机译:非吸收,弱吸收和强吸收电介质的SPR曲线中的共振位移

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摘要

The resonance shifts (i.e., the resonance angle and the reflectance minimum) in surface plasmon resonance (SPR) curves due to the complex refractive index and/or thickness variations of dielectric films were investigated. For both, nonabsorbing and absorbing dielectrics, the resonance angle shifts linearly with the refractive index and/or thickness variations. The reflectance minimum of the nonabsorbing dielectric does not change as the resonance angle shifts. For an absorbing dielectric, the direction of the reflectance change depends strongly on the magnitude of the absorption and thickness of the metal film. The reflectance minimum of the sensor with a thin metal film decreases before increasing while that of the sensor with a thick metal film continuously increases as the absorption of the dielectric film increases. The phenomena were theoretically explained based on the SPR-generated evanescent field at the metal/dielectric interface associated with the optical properties of the sensor architecture.
机译:研究了由于电介质膜的复折射率和/或厚度变化引起的表面等离振子共振(SPR)曲线中的共振位移(即共振角和反射率最小值)。对于非吸收性和吸收性电介质,共振角均随折射率和/或厚度变化线性变化。非吸收性电介质的最小反射率不会随着共振角的变化而变化。对于吸收性电介质,反射率变化的方向在很大程度上取决于吸收的幅度和金属膜的厚度。金属膜较薄的传感器的反射率最小值在增加之前减小,而金属膜较厚的传感器的反射率最小值随着电介质膜的吸收增加而连续增加。理论上基于与传感器架构的光学特性相关的金属/介电界面处SPR生成的渐逝场对现象进行了解释。

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