Room-temperature CO_2 sensing using metal-insulator-semiconductor capacitors comprising atomic-layer-deposited La_2O_3 thin films

摘要

Room temperature detection of CO_2 using metal-insulator-silicon (MIS) devices is reported. These devices comprise atomic layer deposited La_2O_3 thin films as the gas-sensitive dielectric layer and Pt, Pt/Ta and Al as the electrodes. Physical mechanisms that lead to the detection of CO2 at room temperature are discussed.