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P-type octahedral Cu_2O particles with exposed {111} facets and superior CO sensing properties

机译:P型八面体Cu_2O粒子具有暴露的{111}面和出色的CO感测性能

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摘要

P-type Cu_2O nanostructures with an interesting morphological evolution (from cube, truncated octahedral to octahedral) were realized simply by adjusting the amounts of PVP used. Octahedral Cu_2O particles exposing only the {111} facets exhibit a surprisingly competitive sensing activity to CO gases in relatively low working temperature due to high-energy surfaces, large percentage of surface copper atoms density and dangling bonds compared with cube Cu_2O with (100) facets and truncated octahedral Cu_2O with (100) and (111) facets. Our findings may provide an opportunity to explore a simple, efficient, cost-effective and promising sensing/catalysis activity materials in gas sensors, gas catalysis and photo-catalysis.
机译:只需调整PVP的用量即可实现具有有趣的形态演变(从立方,截短的八面体到八面体)的P型Cu_2O纳米结构。与具有(100)刻面的立方Cu_2O相比,仅暴露于{111}刻面的八面体Cu_2O颗粒在较低的工作温度下对CO气体表现出令人惊讶的竞争活性,这是由于其具有高能量表面,高百分比的表面铜原子密度和悬空键所致。并截断了(100)和(111)面的八面体Cu_2O。我们的发现可能为探索一种简单,有效,具有成本效益和前景广阔的气体传感器,气体催化和光催化传感/催化活性材料提供了机会。

著录项

  • 来源
    《Sensors and Actuators 》 |2017年第2期| 211-217| 共7页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, PR China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, PR China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, PR China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, PR China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, PR China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    P-type semiconductor; Cu_2O; Facet-dependent properties; High response; Gas sensors;

    机译:P型半导体;Cu_2O;取决于面的属性;高响应;气体传感器;

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