Crystal Plane-Dependent Gas-Sensing Properties of Cu_2o Particles Nanostructures: Experimental and Theoretical Studies

摘要

Recently, the study on selective exposure of high-energy facets at the surface of metal-oxide semiconductors nanomaterials (MOSs) have been of great concern. Usually, different facets of a single crystal exhibit distinctive chemical and physical properties, for example, gas-sensing ability, chemical reactivity, and adsorption capacity. In principle, gas-sensing by the MOSs is based on the oxidation-reduction reaction of the detected gases occurring on the semiconductor surface, which leads to an abrupt change in conductance of the sensor. For this reason, the gas-sensing ability of the MOSs is in theory very sensitive to the crystal facets of the sensing materials the applications of MOSs with high-energy facets have been concentrated on the surface-reacted processes. Kaneti et al. and Wang et al. studied on the relation between the sensitivity of metal oxide gas sensor and the nature of the crystal surface exposed to the gas species. They demonstrated that semiconductor metal oxidation with high energy surface has the highest gas sensitivity.