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Indium oxide-black phosphorus composites for ultrasensitive nitrogen dioxide sensing at room temperature

机译:用于在室温下进行超细氮二氧化氮二氧化氮的氧化物 - 黑色磷复合材料

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摘要

In_2O_3 nanorods were successfully incorporated by different amount of multi-layer black phosphorus (m-BP), forming the hetero-structured BP-In_2O_3 composites. The structure, morphology and composition of the as-synthesized composites were characterized by X-ray diffraction (XRD), field-emission electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Interestingly, the environmental stability of BP can be notably improved by the introduction of In_2O_3. Moreover, NO_2 sensing properties of BP-In_2O_3 composites were tested at room temperature (25 °C) with relative humidity of 30%. It is demonstrated that the sensor based on BP-In_2O_3 composites exhibits high response, lower detect limit, short response-recovery time and outstanding selectivity at room temperature. Such sensing behavior can be attributed to high adsorption capacity to NO_2, large surface area, excellent carrier mobility of BP-In_2O_3 in presence of BP, as well as high concentration of chemisorbed oxygen on the In_2O_3 surface derived from electrons transfer from BP to In_2O_3.
机译:in_2O_3纳米棒通过不同量的多层黑磷(M-BP)成功地掺入,形成杂结构化的BP-IN_2O_3复合材料。通过X射线衍射(XRD),场发射电子显微镜(FeSEM),透射电子显微镜(TEM)和X射线光电子谱(XPS)的结构,形态和组成的特征在于X射线衍射(XRD),表征。有趣的是,通过引入IN_2O_3,可以显着改善BP的环境稳定性。此外,在室温(25℃)的相对湿度为30%的室温(25℃)中测试Bp-In_2O_3复合材料的NO_2感测性。证明基于BP-IN_2O_3复合材料的传感器在室温下表现出高响应,较低的检测限度,短响应恢复时间和优异的选择性。这种感测行为可归因于NO_2的高吸附能力,大表面积,BP-IN_2O_3在BP存在下的优异载流子迁移率,以及在从BP到IN_2O_3的电子转移的IN_2O_3表面上的高浓度的化学吸附氧。

著录项

  • 来源
    《Sensors and Actuators》 |2020年第4期|127650.1-127650.7|共7页
  • 作者单位

    Shenzhen Key Laboratory of Sensor Technology College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

    College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

    Shenzhen Key Laboratory of Sensor Technology College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

    Shenzhen Key Laboratory of Sensor Technology College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

    Shenzhen Key Laboratory of Sensor Technology College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

    Shenzhen Key Laboratory of Sensor Technology College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

    Shenzhen Key Laboratory of Sensor Technology College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

    State Key Laboratory of Inorganic Synthesis and Preparative Chemistry Jilin University Changchun 130012 PR China;

    Shenzhen Key Laboratory of Sensor Technology College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

    Shenzhen Key Laboratory of Sensor Technology College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Indium oxide; Black phosphorus; Room temperature; Sensor; NO_2;

    机译:氧化物铟;黑磷;室内温度;传感器;no_2.;

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