Influence of electrical modes on radiation sensitivity of hydrogen sensors based on Pd-Ta_2O_5-SiO_2-Si structures

摘要

The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was researched. There were measured the hydrogen responses of output voltagesVof the MISFET-based circuits at different gate voltages before and after electron irradiations. The voltagesVas functions of hydrogen concentrationCwere determined for different ionizing dosesD. Models of influence of the electric modes on the radiation sensitivity of sensors were based on experimental dependencies ofV(C,D). The recommendations for the optimal choice of MISFET-based circuit’s electric modes were formulated.