Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy

摘要

Metalorganic-vapour-phase-epitaxy-grown GaN layers have been exposed to a deuterium radio-frequency plasma. It is shown that in a certain plasma configuration, deuterium diffuses significantly inside the samples as long as they are Mg doped. But, on the other hand, in non-intentionally doped samples, in equivalent plasma conditions, deuterium accumulates just beneath the surface. It is also shown that in GaN : Mg, the diffusing deuterium species interact with native hydrogen and are responsible for its redistribution inside the layer.