Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors

摘要

We report on the microwave noise measurements in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors. Noise parameters F_min, R_N and G_opt were measured and simulated in a broadband frequency range (2--26 GHz). Small--signal equivalent circuit and noise model parameters for different biases were extracted.