Development of InGaAsN-based 1.3 μm VCSELs

摘要

We review the status of InGaAsN-based vertical-cavity surface-emitting lasers (VCSELs) emitting in the wavelength range 1.2-1.3 μm and compare them with similar devices that have been realized using other approaches. To prove the potential of InGaAsN-based VCSELs, we present our results For monolithically MBE- and MOVPE-grown and electrically pumped VCSELs on GaAs substrates. Our MBE-grown devices emit at a Wavelength of up to 1305 nm with cw output power at room temperature Exceeding 1 mW and a threshold current of 2.2 mA.