Mgneto-optical and light-emission properties of III-As-N semiconductors

摘要

A brief review on our present knowledge of optical and magneto-optical properties of III-V-N alloys, in particular, Ga(In)Nas alloys with low nitrogen compositions is given. The main attention is focused on fundamental electronic parameters of the Ga(In)Nas alloys as well as key material-related issues which are relevant to device applications, such as identification of dominant recombination processes in the alloys, compositional dependence of electron effective mass and band alignment in Ga(In)Nas-based heterostructures.