Hot-electron energy relaxation in GaAs/GaAlAs two-dimensional Structures: importance of two-phonon processes

摘要

The energy relaxation of hot electrons has been studied in GaAs/GaAlAs two-dimensional structures with emphasis on the role of two-phonon processes for the first time. An expression for the power loss due to electron-two-zone edge transverse acoustic (TA) phonon interaction is derived using the effective carrier-two-phonon interaction Hamiltonian. Numerical calculations for the power loss are presented over a wide electron Temperature range by incorporating the electron-two-zone edge TA phonon Interaction besides the usual one-phonon scattering.