Sample curvature and dislocation density studies on ion-implanted GaAs by x-ray diffraction

摘要

We have studied semi-insulating (001) GaAs wafers implanted with 70 MeV ~(120)Sn ions to various doses ranging from 5 x 10~(12) to 5 x 10~(14) ions cm~(-2) following the procedures in our earlier work, Nair et al (2001 Nucl. Instrum. Methods B 184 515―22). The sample curvature is studied at various doses and compared with the theoretically expected values. Also, a survey of some reported implantations with similar experimental data has been carried out for comparison. The bending of the sample, related to defects and linear dislocation density due to implantation, is modelled and compared with the estimates for the same by x-ray diffraction. The samples have been annealed using a rapid thermal annealing system and the variation in curvature and dislocation density with annealing temperature has been studied.