Oxidation-induced stacking faults and related grown-in oxygen precipitates in nitrogen-doped Czochralski silicon

摘要

In this paper, we investigate oxidation-induced stacking faults (OSFs) and related grown-in oxygen precipitates of nitrogen-doped Czochralski (NCZ) silicon. The samples were oxidized at 1150℃ or were annealed under different conditions. It was found that OSFs with different densities in the NCZ silicon distributed not only in the OSF-ring region, but also in the inner region of the ring. Furthermore, the OSF ring was extended by nitrogen doping. In addition, the investigation of oxygen precipitates indicates that nitrogen changes the size and density distribution of grown-in oxygen precipitates in the OSF-ring and void regions of the NCZ silicon during crystal growth, and therefore the OSF behaviour is changed. Based on the experimental facts, in particular we discuss the mechanism of nitrogen affecting the distribution of OSFs in different regions.