Diamond metallization for device applications

摘要

Nearly any diamond electronic or sensor device needs at least one ohmic contact. These contacts play a key role in the overall device performance. This paper reviews the dependence of the Schottky barrier height on the surface termination and the impact of annealing of carbide-forming metals on the specific contact resistivity to diamond. It is concluded that carbide patches dominate the specific contact resistivity after annealing. Furthermore, the doping dependence of the specific contact resistivity and suitable diffusion barriers, which avoid interdiffusion of the contact scheme, are briefly discussed.